Abstract

We have studied a GaAs-AlAs planar microcavity with a resonance near 1300nm in the telecom range by ultrafast pump-probe reflectivity. By the judicious choice of pump frequency, we observe a ultimate fast and reversible decrease of the resonance frequency by more than half a linewidth due to the instantaneous electronic Kerr effect. The switch-on and switch-off of the cavity is only limited by the cavity storage time of τcav = 0.3ps and not by intrinsic material parameters. Our results pave the way to supra-THz switching rates for on-chip data modulation and real-time cavity quantum electrodynamics.

URL

https://aip.scitation.org/doi/10.1063/1.3580615

Authors

G. Ctistis, E. Yüce, A. Hartsuiker, J. Claudon, M. Bazin, J.-M. Gérard, and W. L. Vos

Year of publication

2011

Date published

01/2011

Journal

Appl. Phys. Lett.

Volume

98

Pages

161114: 1-3

DOI number

10.1063/1.3580615

Keywords

kerr effect, microcavity, planar GaAs/AlAs, switching, ultrafast optics