| Abstract | The radiative and nonradiative decay rates of InAs quantum dots are measured by controlling the local density of optical states near an interface. From time-resolved measurements, we extract the oscillator strength and the quantum efficiency and their dependence on emission energy. From our results and a theoretical model, we determine the striking dependence of the overlap of the electron and hole wavefunctions on the quantum dot size. We conclude that the optical quality is best for large quantum dots, which is important in order to optimally tailor quantum dot emitters for, e.g., quantum electrodynamics experiments. |
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| Authors | J. Johansen, S. Stobbe, I. S. Nikolaev, T. Lund-Hansen, P. T. Kristensen, J. M. Hvam, W. L. Vos, and P. Lodahl |
| Year of publication | 2008 |
| Date published | 02/2008 |
| Journal | Phys. Rev. B. |
| Volume | 77 |
| Pages | 073303: 1-4 |
| DOI number | 10.1103/PhysRevB.77.073303 |
| Keywords | interfaces, LDOS, nonradiative decay, quantum description of interaction of light and matter, quantum dots, radiative decay, spontaneous emission |