Electrochemical formation of porous GaP in aqueous HNO3
| Abstract | Porous gallium phosphide was produced by anodic etching of n-type GaP in an aqueous solution of 1M HNO_3. At potentials lower than 15.5 V, yellow porous samples were obtained, of which the pore size was around 45% larger than the pores obtained in 0.5 M H_2SO_4. At potentials around 15.5 V electropolishing occurred. No pores formed when GaP was etched at potentials in this range. At potentials higher than approximately 15.5 V the current density increased strongly with increasing potential, and very large pores formed. It was found that NO_3^- and SO_4^2+only play a role in the chemical dissolution of the oxide layer that forms during etching. |
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| Authors | R. W. Tjerkstra |
| Year of publication | 2006 |
| Date published | 02/2006 |
| Journal | Electrochem. Solid-State Lett. |
| Volume | 9 |
| Pages | C81-C84 |
| DOI number | 10.1149/1.2183889 |
| Keywords |