Abstract

Metamorphic growth of lattice mismatched InGaP on GaAs has been used to fabricate a ultrafast semiconductor saturable absorber mirror operating at the 1060 nm wavelength range. The absorption recovery time could be reduced to ~5 ps without deteriorating the nonlinear absorption properties. The device was used to demonstrate self-starting operation of a mode-locked Yb-doped fiber laser and obtain high quality picosecond pulses.

Authors

S. Suomalainen, M. Guina, T. Hakulinen, O. G. Okhotnikov, T. G. Euser, and S. Marcinkevicius

Year of publication

2006

Date published

08/2006

Journal

Appl. Phys. Lett.

Volume

89

Number

071112: 1-3

Keywords

lattice mismatch, saturable absorber, ultrafast optics